发明名称 Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
摘要 Embodiments of the invention are directed to apparatuses and methods for producing chemical reactive vapors for vapor deposition processes, including chemical vapor deposition or atomic layer deposition processes used in manufacturing microfeature workpieces. In one embodiment, a gas is passed over a surface of a material in an ampoule to form a vapor in a vapor cell within the ampoule. The vapor cell has a volume, and the volume of the vapor cell is maintained at least approximately constant as the material is vaporized. In another embodiment, a gas is passed through an inlet of an ampoule and onto a surface of a material to form a vapor, and a distance between the inlet and the surface of the material is maintained approximately constant as the material is vaporized. In still other embodiments, the vapor produced by the foregoing embodiments is used in a vapor deposition process.
申请公布号 US2005249873(A1) 申请公布日期 2005.11.10
申请号 US20040839316 申请日期 2004.05.05
申请人 SARIGIANNIS DEMETRIUS;DERDERIAN GARO J 发明人 SARIGIANNIS DEMETRIUS;DERDERIAN GARO J.
分类号 C23C16/00;C23C16/448;(IPC1-7):C23C16/00 主分类号 C23C16/00
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