| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory apparatus of which the size can be reduced. <P>SOLUTION: A flash memory 3 is provided with a memory cell including a memory transistor including a floating gate and a control gate, a word line connecting commonly control gates of the memory cell transistors of the same row, a voltage generating circuit 120 generating negative voltage and positive voltage, a first row decoder 29-1 provided for each word line and applying positive voltage to the word line at the time of writing and erasing, a second row decoder 29-2 provided for each word line and applying negative voltge to the word line at the time of writing and erasing, a first transistor 28-1 for separation provided for each word line and switching between the first row decoder 29-1 and the word line a second transistor 28-2 for separation provided for each word line and switching between the second row decoder 29-2 and the word line. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
