| 摘要 |
<P>PROBLEM TO BE SOLVED: To form the circuit pattern of a semiconductor device according to the designed size. <P>SOLUTION: This semiconductor device is manufactured by using the steps of planarizing the surface level differences in the upper surface of an underlying film provided on a substrate by polishing the upper surface of the underlying film, forming an anti-reflective coating with a uniform thickness in contact with the underlying film whose upper surface has been planarized, and covering the anti-reflective coating with a resist film and forming a resist pattern in the resist film using a photomask. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
