| 摘要 |
PROBLEM TO BE SOLVED: To prevent a memory function from being adversely affected without lowering transverse strength of a semiconductor device with the memory function such as a DRAM. SOLUTION: A strain layer 100 formed of microcracks of a thickness of 0.2μm or less observed by a transmission electron microscope is formed in the rear W2 of the semiconductor device W with a memory function. Gettering effect is obtained by forming an extremely thin strain layer 100, and neither the memory function nor the transverse strength is deteriorated. COPYRIGHT: (C)2006,JPO&NCIPI
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