| 摘要 |
PROBLEM TO BE SOLVED: To provide a floating gate type nonvolatile memory which is hard to influence by a potential of an interconnect line near which a gate threshold voltage is prepared, or by a charge stuck at an upward portion of a floating type gate after manufacturing regarding a semiconductor nonvolatile memory having the floating gate, especially the semiconductor nonvolatile memory in which the floating gate is arranged at an upward portion of a controlling gate. SOLUTION: A shield conductive layer is prepared in the upper portion of the floating gate through a shield insulating film. The shield insulating film employs an insulating film which does not use a depositing method in which a gas atmosphere containing electrons of plasma CVD or the like, and electrically-charged particles of ion or the like, contacts with wafer surface, but uses a depositing method in which neutral molecules and atoms fly just above a wafer, such as thermal CVD (chemical vapor deposition), radical CVD, light CVD and thermal oxidation or the like. COPYRIGHT: (C)2006,JPO&NCIPI
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