| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a bismuth-substitution type magnetic garnet membrane having larger quenching ratio than ever before and low insertion loss, low pitting defects factor and low crack defects factor, and a method for obtaining the membrane. SOLUTION: This method for producing the bismuth-substitution type magnetic garnet membrane employs an LPE(liquid phase epitaxy) process, characterized in that a non-magnetic garnet single crystal substrate having a half-value width of the rocking curve in lattice(8 8 8) plane of the substrate of≤140 seconds is used for growing the bismuth-substitution type magnetic garnet membrane by the LPE process. Also the non-magnetic garnet single crystal substrate preferably has a composition expressed by general formula (Gd, Ca)<SB>3</SB>(Ga, Mg, Zr)<SB>5</SB>O<SB>12</SB>. COPYRIGHT: (C)2006,JPO&NCIPI |
