THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide the thin film transistor of a small OFF current. SOLUTION: The gate length II of the widened piece 32b of the end of a gate electrode 32 is longer than the gate length I of the main body 32a of the gate electrode 32. The path of a current flowing to an active layer 21 via the end of the gate electrode 32 is lengthened in the widened piece 32b of the gate electrode 32. Generation of a leak current via the gate electrode 32 is reduced in the circumferential edge 64 of the active layer 21. The OFF current of the entire of the thin film transistor 8 lowers. Transistor characteristic of the thin film transistor 8 can be improved. COPYRIGHT: (C)2006,JPO&NCIPI