| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and wiring board which can be reduced in internal stress, caused by a difference in coefficient of thermal expansion between a base board and a semiconductor chip, and to provide a method of manufacturing the wiring board. SOLUTION: As the wiring board 2, interconnection layers 7 and 8, each containing organic insulating resin, are formed on both surfaces of a base substrate 3 formed of silicon. The internal stress of the wiring board is balanced by the organic insulating resin contained in the interconnection layers on both surfaces. On electrodes in the most upper layer of the interconnection layer 7, external connection bumps 5 are formed. In the base substrate 3, through-holes 6 for electrically connecting the interconnection layers 7 and 8 are formed. Electrode terminals on the chip mounting surface and those of a semiconductor chip 1 are both electrically and mechanically connected by internal connection bumps 23. Since the base substrate 3, formed of silicon has a coefficient of thermal expansion, which is identical with that of the semiconductor chip 1 and is smaller than those of the interconnection layer 7 and the second interconnection layer 8, the stress caused by the differences in the coefficients of thermal expansion between the semiconductor chip 1 and the base substrate 3 is very small. COPYRIGHT: (C)2006,JPO&NCIPI |
