| 摘要 |
A semiconductor storage device comprises a semiconductor substrate; a memory cell block including a plurality of transistors formed on the semiconductor substrate, said plurality of transistors being connected in series by serial connection of a source and a drain of two neighboring transistors; first electrodes which are electrically connected to the source or drain of two neighboring transistors; a ferroelectric film deposited on sidewalls of the first electrodes to retain a gap in a central portion between two neighboring first electrodes; and second electrodes buried in the gaps and insulated from the electrodes of the transistors.
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