| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can suitably be used as a semiconductor chip to be mounted on an MCP, suppresses diffusion of heavy metal from the backside of the semiconductor device to nearby an element active area, and has high mechanical strength; and to provide a manufacturing method thereof. <P>SOLUTION: A lower semiconductor device 13 has the semiconductor substrate having the element active area 13a on its top surface, and the substrate is≤130μm thick. Further, a heavily doped layer 21 whose thickness is about 60% of the substrate thickness is formed between the element active area 13a and the bottom surface of the substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
