| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can narrow the pitch of wiring or the like without using an expensive exposure device and an expensive mask. <P>SOLUTION: The semiconductor device is provided with a first electric conduction pattern 42, a second electric conduction pattern 42 formed adjacent to the first electric conduction pattern; a first conductor plug 28 formed under a predetermined region of the first electric conduction pattern, a second conductor plug 62<SB>n</SB>formed on the predetermined region of the first electric conduction pattern, a third conductor plug 28 formed under the predetermined region contiguous to the predetermined region of the first electric conduction pattern in the second electric conduction pattern, a fourth conductor plug 62<SB>n+1</SB>formed on the predetermined region of the second electric conduction pattern; a third electric conduction pattern 62 formed above the first electric conduction pattern 42 and connected to the second conductor plug, and a fourth electric conduction pattern 64 formed above the second electric conduction pattern, and connected to the fourth conductor plug. Further, the fourth conductor plug is arranged at the position shifted to the second conductor plug. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
