发明名称 |
INTEGRATED CIRCUIT OF ULTRA-FINE VOLTAGE ISLAND |
摘要 |
PROBLEM TO BE SOLVED: To provide an integrated circuit of an ultra-fine voltage island. SOLUTION: A method of applying a voltage to an integrated circuit is provided. A high-voltage VddH and/or a low-voltage VddL is supplied to a filler cell 16 and is applied to other cells. Each voltage VddH and each voltage VddL are applied by either of a first voltage supply wiring 6 or a second voltage supply wiring 8. A voltage application wiring 4 applies a required voltage to the filler cell. The first and second voltage supply wirings 6 and 8 are preferably in parallel with the voltage application wiring 4, and its end is aligned on the end of the voltage application wiring 4. A via 10 is formed, and the required voltage is applied. Preferably, the first voltage supply wiring 6 is M1 wiring formed outside a filler cell 16 range, and the second voltage supply wiring 8 is M2 wiring formed inside the filler cell 16 range. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005317964(A) |
申请公布日期 |
2005.11.10 |
申请号 |
JP20050125677 |
申请日期 |
2005.04.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD |
发明人 |
KO EISEI;TIEN LI-CHUN;SHAW CHING-HAO;YU WAN-PIN;CHENG CHIA-LIN;LU LEE-CHUNG |
分类号 |
H01L21/822;G06F1/18;G11C5/06;G11C5/14;H01L21/82;H01L23/528;H01L27/00;H01L27/04;H01L27/10;H01L29/73;H01L29/739;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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