| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface light emission laser element stabilized in its operation by suppressing a variation of element resistance during current conduction of the surface light emission laser element. SOLUTION: An oxidation narrowed surface light emission laser element consists of a lower laminate which includes a lower multilayer film reflecting mirror and at least a part of which has a first conductivity type on a semiconductor substrate; of an active layer; and of an upper laminate which includes an upper multilayer film reflecting mirror, and at least a part of which has a second conductivity type opposite to that of the first conductivity type, and further consists of a current narrowed layer structure in the lower laminate or the upper laminate with its peripheral edge formed with an oxidized semiconductor layer. The manufacturing method of the oxidation narrowed surface light emission laser element comprises an oxidation process of holding a wafer including the lower laminate, the active layer, and the upper laminate formed on the semiconductor substrate, in a water vapor atmosphere at a predetermined temperature for a predetermined time, and thereafter an annealing process of holding the wafer at a temperature of≥450°C for a predetermined time. COPYRIGHT: (C)2006,JPO&NCIPI
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