| 摘要 |
PROBLEM TO BE SOLVED: To form a wiring material sufficiently converted into copper alloy in fine wiring grooves or connection holes provided in a semiconductor device. SOLUTION: According to this method, the semiconductor is manufactured wherein copper-aluminum alloy wiring is disposed in the wiring grooves or connection holes provided within an insulating film on a substrate. This method comprises steps of: forming a metal barrier layer reflecting the internal shape of the wiring grooves or connection holes along the internal shape of the wiring grooves or connection holes; forming a metal film containing aluminum on the metal barrier layer along the shape of the metal barrier layer; filling the wiring material so that the wiring material consisting of pure copper is disposed to fill the inside of the wiring groove or connection holes whose internal surface is covered with the metal film; and forming the copper-aluminum alloy wiring within the wiring groove or connection holes by annealing the metal film and the wiring material to convert the aluminum in the metal film and the pure copper in the wiring material into the alloy. COPYRIGHT: (C)2006,JPO&NCIPI
|
