| 摘要 |
A flash memory device and a method for fabricating the same is disclosed that reduces or prevents mis-operation and improves integration, which includes a semiconductor substrate having a field region and an active region; a device isolation layer on the field region including a conductive (e.g., polysilicon) layer and an insulating layer thereon; a sidewall spacer at sides of the device isolation layer; an ONO layer on the active region; a gate electrode on the ONO layer; source and drain regions at sides of the gate electrode in the active region; a passivation layer on the semiconductor substrate, having a contact hole in the drain region; and a drain electrode in the contact hole, connected with the drain region.
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