| 摘要 |
There is provided a semiconductor memory design technique, specifically a bus connection circuit for a read operation of a multi-port memory device. The bus connection circuit is adapted to a current sensing type bus transmission/reception structure. The bus connection circuit includes: a read data sensing/latching unit for sensing/latching a read data applied on a local data bus in response to a read data strobe signal; and a read data driving unit for driving the data latched in the read data sensing/latching unit to a global data bus in response to a read data driving pulse, and for connecting or disconnecting a path of current flowing the global data bus according to a logic level of the latched data.
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