发明名称 |
Phase random access memory with high density |
摘要 |
A phase random access memory including a plurality of access transistors, each access transistor including a drain region, and a phase-changeable film shared by the plurality of access transistors. The phase-changeable film is connected to a bitline through a first electrode and connected to each respective drain region through at least one of a plurality of second electrodes.
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申请公布号 |
US2005247922(A1) |
申请公布日期 |
2005.11.10 |
申请号 |
US20050177115 |
申请日期 |
2005.07.08 |
申请人 |
OH HYUNG-ROK;CHO BEAK-HYUNG;KIM DU-EUNG;CHO WOO-YEONG |
发明人 |
OH HYUNG-ROK;CHO BEAK-HYUNG;KIM DU-EUNG;CHO WOO-YEONG |
分类号 |
G11C13/00;G11B7/24;G11C11/56;G11C16/02;H01L27/10;H01L27/105;H01L27/24;H01L29/76;H01L45/00;H01L47/00;(IPC1-7):H01L47/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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