| 摘要 |
The present invention provides a boosted voltage generator of a semiconductor device where a boosted voltage efficiency and drivability at a target boosted voltage level can be evaluated accurately by employing an enable signal generator. The boosted voltage generator includes a boosted voltage pad; a level detection means for detecting whether or not a present boosted voltage reaches a target boosted voltage level; an oscillation means for performing an oscillation mode in response to a signal outputted from the level detection means; a charge pumping means for outputting a level-controlled boosted voltage in response to a signal outputted from the oscillation means; and an enable signal generation means for operating the oscillation means in response to a signal outputted from the level detection means.
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