| 摘要 |
Control circuit for an IGB transistor, which comprises means (T 1 , V 1 , C 3 , C 4 ) for generating auxiliary voltage, a first and a second controllable control switches (V 8 ) connected in series between the auxiliary voltage, and a gate resistor (Rg). The control circuit further comprises a boost capacitor (Cg) connected in series with the gate resistor (Rg), a resistor (R 3 ) whose first terminal is connected to the second terminal ( 4 ) of the boost capacitor and whose second terminal is connected to the intermediate voltage level of the auxiliary voltage of the control switches, a Zener diode (V 9 ) whose anode is connected to the point between the gate resistor and the boost capacitor and whose cathode is connected to the point between the boost capacitor and the resistor (R 3 ), and a diode (V 10 ) whose anode is connected to the cathode of the Zener diode (V 9 ) and whose cathode is connected to the positive terminal of the auxiliary voltage of the control switches.
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