发明名称 |
SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME |
摘要 |
A process for producing a sputtering target composed mainly of oxychalcogenides containing La and Cu through sintering of as a raw material at least one powder selected from among constituent elements per se and oxides and chalcogenides thereof, characterized in that the process comprises a reaction step of maintaining 850°C or below for 1 hr or more during sintering operation and, performed after the reaction step, pressurized sintering at a temperature equal to or higher than the temperature of the reaction step. This process is to not only attain increasing of the density of target for P type transparent conductive material composed mainly of oxychalcogenides containing La and Cu, increasing of target size and production thereof at low cost but also achieve elimination of the presence of unreacted matter in the target and inhibiting of target cracking to thereby improve product yield, and further is to enhance the quality of film formed by sputtering with the use of the target. |
申请公布号 |
KR20050106475(A) |
申请公布日期 |
2005.11.09 |
申请号 |
KR20057016191 |
申请日期 |
2005.08.30 |
申请人 |
NIKKO MATERIALS COMPANY, LIMITED |
发明人 |
HOSONO HIDEO;UEDA KAZUSHIGE;YAHAGI MASATAKA;TAKAMI HIDEO |
分类号 |
C04B35/547;C04B35/645;C23C14/34;(IPC1-7):C23C14/34 |
主分类号 |
C04B35/547 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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