发明名称 |
MEMBER OF APPARATUS FOR PLASMA TREATMENT, MEMBER OF TREATING APPARATUS, APPARATUS FOR PLASMA TREATMENT, TREATING APPARATUS AND METHOD OF PLASMA TREATMENT |
摘要 |
According to the present invention, gas in which oxygen gas and krypton are mixed is introduced into a process vessel from a process gas supply source while a processing target made of an aluminum alloy in the process chamber is kept at a predetermined temperature, and plasma is generated in the process vessel by a microwave. Radical oxidation processing by an oxygen radical generated thereby is applied to a surface of the processing target, so that a dense oxide coating film with improved corrosion resistance is formed on the surface of the processing target. <IMAGE>
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申请公布号 |
EP1593751(A1) |
申请公布日期 |
2005.11.09 |
申请号 |
EP20040702064 |
申请日期 |
2004.01.14 |
申请人 |
TOKYO ELECTRON LIMITED;OHMI, TADAHIRO |
发明人 |
OHMI, TADAHIRO;SHIRAI, YASUYUKI;KITANO, MASAFUMI, |
分类号 |
C23C16/44;C23C8/36;C23C16/511;H01J37/32;H01L21/3065;H01L21/31;(IPC1-7):C23C8/36;C22C21/06;H05H1/46 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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