发明名称 MEMBER OF APPARATUS FOR PLASMA TREATMENT, MEMBER OF TREATING APPARATUS, APPARATUS FOR PLASMA TREATMENT, TREATING APPARATUS AND METHOD OF PLASMA TREATMENT
摘要 According to the present invention, gas in which oxygen gas and krypton are mixed is introduced into a process vessel from a process gas supply source while a processing target made of an aluminum alloy in the process chamber is kept at a predetermined temperature, and plasma is generated in the process vessel by a microwave. Radical oxidation processing by an oxygen radical generated thereby is applied to a surface of the processing target, so that a dense oxide coating film with improved corrosion resistance is formed on the surface of the processing target. <IMAGE>
申请公布号 EP1593751(A1) 申请公布日期 2005.11.09
申请号 EP20040702064 申请日期 2004.01.14
申请人 TOKYO ELECTRON LIMITED;OHMI, TADAHIRO 发明人 OHMI, TADAHIRO;SHIRAI, YASUYUKI;KITANO, MASAFUMI,
分类号 C23C16/44;C23C8/36;C23C16/511;H01J37/32;H01L21/3065;H01L21/31;(IPC1-7):C23C8/36;C22C21/06;H05H1/46 主分类号 C23C16/44
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