| 摘要 |
<p>A MIS-type semiconductor device includes a p-type semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and n-type diffused source and drain layers formed in regions of the semiconductor substrate located below both sides of the gate electrode. Insides of the n-type diffused source and drain layers are formed with p-type impurity implanted regions having a lower p-type impurity concentration than the impurity concentration of the n-type diffused source and drain layer.</p> |
