| 摘要 |
<p>A method of heat treating a thin film transistor using a metal induced lateral crystallization (MILC) method is provided, which does not deteriorate performance of a poly-silicon thin film transistor and can perform a MILC heat treatment at lower cost, in forming the poly-silicon thin film transistor by the MILC method. The thin film transistor heat treatment method includes the steps of: forming an amorphous silicon film on an insulation substrate; forming an amorphous silicon thin film transistor using the amorphous silicon film; primarily heat treating the amorphous silicon thin film transistor at a low temperature for a long time under the atmosphere of vacuum, by a MILC method, to thus crystallize the amorphous silicon film in the thin film transistor to be transformed into a poly-crystallized film; and secondarily heat treating the poly-silicon thin film transistor under the atmosphere of hydrogen at a low temperature for a short time, and recovering electrical characteristics of the heat-treated poly-silicon thin film transistor under the vacuum atmosphere.</p> |
