| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can enhance reliability of electrical connection via a layer insulating film, an active matrix substrate, an electrooptic device using the active matrix substrate, and a manufacturing method of the semiconductor device. SOLUTION: When making an electrical connection in a semiconductor device through a contact hole, a borophosphsilicate glass, which contains much phosphorus and is superior in terms of planarization, is used for a second insulating film 72 (with a boron concentration of approx. 2 weight percent and a phosphorus concentration of approx. 7 weight percent) of an upper layer insulating film 7. However, under the upper layer insulating film 7, there is a thin first insulating film 71, which is made of a borophosphsilicate glass with higher boron concentration (approx. 4-5 weight percent) and with lower phosphorus concentration (approx. 4-5 weight percent) than the second insulating film 72. When a contact hole 8 is formed, etching will not proceed in the boundary region between the contact hole 8 and lower layer insulating film 4, because the first insulting film 71 has high adhesion to a non-doped silicate glass used for a lower layer insulation film 4 and a low etching speed.</p> |
