| 摘要 |
The present invention discloses a method for fabricating a semiconductor device. In a process for forming a contact plug, a pad polycrystalline silicon layer pattern is formed at the presumed contact region, and a contact plug is formed according to a selective epitaxial growth (SEG) method using the pad polycrystalline silicon layer pattern as a seed. Accordingly, a higher contact plug is formed by improving a growth rate of the SEG process, and thus a succeeding process can be easily performed. In the SEG process, a contact property is improved by compensating for a semiconductor substrate damaged in a process for forming an insulating film spacer at the sidewalls of a gate electrode. As a result, the property and yield of the semiconductor device are remarkably improved. |
