| 摘要 |
A first conductive pattern group including a gate line (102), a gate pad (126), and a gate electrode (108) of a thin film transistor (106), the thin film transistor (106) connected to the gate line (102) on a substrate (145); forming a gate insulating film (143) on the substrate (145) including the first conductive pattern group; forming a second conductive pattern group including a data line (104) intersecting the gate line (102), a source electrode (110) of the thin film transistor (106) connected to the data line (104), and a drain electrode (112) of the thin film transistor (106), an ohmic contact layer (150), and a semiconductor layer (148) for forming a channel region of the thin film transistor (106); forming a third conductive pattern group including a transparent electrode material connected to the drain electrode (112); and etching the gate insulating film (143) and the ohmic contact layer (150) using the second and the third conductive pattern groups as a mask.
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