发明名称 |
Enhancement mode metal-oxide-semiconductor field effect transistor |
摘要 |
An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.
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申请公布号 |
US6963090(B2) |
申请公布日期 |
2005.11.08 |
申请号 |
US20030339379 |
申请日期 |
2003.01.09 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
PASSLACK MATTHIAS;HARTIN OLIN L.;RAY MARCUS;MEDENDORP NICHOLAS |
分类号 |
H01L21/336;(IPC1-7):H01L31/072 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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