| 摘要 |
The method for manufacturing a DRAM capacitor is employed to enhance charge capacitance and electrical endurance of the DRAM capacitor by structuring a double dielectric layer of aluminum oxide (Al<SUB>2</SUB>O<SUB>3</SUB>) and hafnium oxide (HfO<SUB>2</SUB>). The method includes steps of: preparing an active matrix including a semiconductor substrate, an ILD formed on the semiconductor substrate and a storage node obtained after patterning the ILD into a predetermined configuration; forming a bottom electrode on top faces of the storage node and portions of the ILD; forming a diffusion barrier on an exposed surface of the bottom electrode; forming a double dielectric layer including an aluminum oxide layer and a hafnium oxide layer, wherein the aluminum oxide layer and the hafnium oxide layer are formed on the diffusion barrier in succession; carrying out an annealing process for recovering dielectric properties of the aluminum oxide layer and the hafnium oxide layer; and forming a top electrode on the hafnium oxide layer.
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