发明名称 Low-temperature fabrication of thin-film energy-storage devices
摘要 A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step, especially a cathode anneal of thin-film batteries. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is supplied directly to the material forming the film. The energy can be in the form of energized ions of a second material. Supplying energy directly to the material and/or the film being deposited assists the growth of the crystalline structure of film. For lithium-ion energy-storage devices, the first material is an intercalation material, which releasably stores lithium ions therein. Supercapacitors and energy-conversion devices are also fabricated according the methods.
申请公布号 US6962613(B2) 申请公布日期 2005.11.08
申请号 US20010815919 申请日期 2001.03.23
申请人 CYMBET CORPORATION 发明人 JENSON MARK L.
分类号 A61N1/372;A61N1/378;B05C11/00;B05D5/12;C23C14/00;C23C14/06;C23C14/08;C23C16/00;C23C16/04;G02F1/133;H01G9/00;H01G9/02;H01G9/025;H01G9/038;H01G9/155;H01L21/00;H01L21/302;H01L21/461;H01L23/58;H01L31/00;H01L31/072;H01L31/18;H01M2/00;H01M2/02;H01M2/10;H01M2/14;H01M2/20;H01M4/02;H01M4/04;H01M4/1391;H01M4/1393;H01M4/1397;H01M4/40;H01M4/48;H01M4/52;H01M4/58;H01M4/88;H01M4/90;H01M6/00;H01M6/18;H01M6/40;H01M6/42;H01M6/46;H01M8/10;H01M8/12;H01M10/04;H01M10/0562;H01M10/0585;H01M10/36;H01M10/38;H01M10/42;H01M10/44;H01M10/46;H01M14/00;H04M1/02;H05K1/16;(IPC1-7):H01M6/00 主分类号 A61N1/372
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