发明名称 |
Tandem etch chamber plasma processing system |
摘要 |
A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.
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申请公布号 |
US6962644(B2) |
申请公布日期 |
2005.11.08 |
申请号 |
US20020241653 |
申请日期 |
2002.09.10 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
PATERSON ALEXANDER;TODOROV VALENTIN N.;MCCHESNEY JON;SCHNEIDER GERHARD M.;PALAGASHVILI DAVID;HOLLAND JOHN P.;BARNES MICHAEL S. |
分类号 |
H01L21/00;(IPC1-7):C23F1/00;H01L21/306;C23C16/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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