| 摘要 |
A method of manufacturing a semiconductor device having an isolation region, a trench formed on a semiconductor substrate and an insulating film buried within the trench; includes: forming a gate electrode in an active region adjacent to the isolation region; applying an ion implantation onto the substrate to form a first dopant diffusion region; forming a first and a second insulating film, on the entire surface of the substrate; performing an etch back, to form a first sidewall of the second insulating film on a lateral face of the gate electrode; etching the first insulating film to form a second sidewall of the first insulating film on the lateral face of; making another ion implantation to form a second dopant diffusion region; forming an interlayer insulating film; and forming a contact hole to reach the second dopant diffusion region.
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