Gain stabilization technique for narrow band integrated low noise amplifiers

摘要

A resonant load circuit is disposed in an integrated circuit, where the resonant load circuit includes an integrated inductance in parallel with an integrated capacitance, and further includes a first integrated resistance R_s in series with one of the inductance and capacitance, preferably in series with the inductance, and a second integrated resistance R_p in parallel with the inductance and capacitance. The first and second integrated resistances have values selected for reducing an amount of resonant load circuit Q over a plurality of instances of the integrated circuit. In a preferred, but non-limiting, embodiment the resonant load circuit forms a load in an RF low noise amplifier, such as a balanced inductively degenerated common source low noise amplifier (LNA).