| 摘要 |
A capacitive structure is described that comprises a first node and a second node. The first node comprises a first pair of vertically aligned strips that are electrically connected with one or more vias and a second pair of vertically aligned strips that are electrically connected with one or more vias. The higher strips of both of the pairs are at a same metal level and the lower strips of both of the pairs are at a same lower metal level. The second node comprises, at the metal level, a first metal structure having a pair of windows. A first of the windows surround and are isolated from a first of the higher strips. A second of the windows surround and are isolated from a second of the higher strips. The second node also comprises, at the lower metal level, a second metal structure having a pair of windows. A first of the windows surround and are isolated from a first of the lower strips. A second of the windows surround and are isolated from a second of the lower strips. The first and second metal structures are electrically connected with one or more vias.
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