| 摘要 |
An autotesting method of a cells matrix of a memory device includes the steps of reading the values contained in a plurality of the memory cells, comparing the read values with reference values, signaling mismatch of the read values with the reference values as an error situation, and storing the error situations. In the autotesting method, the reading, comparing, signaling, and storing steps are repeated for all the memory cells in a matrix column. The autotesting method further includes the steps of storing the positions of any columns having at least one error situation, and repeating all of the preceding steps for all the matrix columns.
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