SEMICONDUCTOR DEVICE HAVING DOUBLE LAYERED GATE ELECTRODE AND METHOD OF FORMING THE SAME,申请号KR20040030929-传众专利搜索

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发明名称	SEMICONDUCTOR DEVICE HAVING DOUBLE LAYERED GATE ELECTRODE AND METHOD OF FORMING THE SAME
摘要
申请公布号	KR20050105696(A)	申请公布日期	2005.11.08
申请号	KR20040030929	申请日期	2004.05.03
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	CHUNG, EUN KUK;YEO, IN JOON;KIM, JOON;KIM, JIN HONG;BANG, SUK CHUL
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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