| 摘要 |
The present invention provides a technology capable of shortening a TAT of a microcomputer with a nonvolatile memory built therein and achieving a reduction in cost. Flash ROMs comprising memory cells each substantially identical in structure to each of memory cells of a flash memory are formed in their corresponding chips lying in a wafer. Subsequently, memory information is written into each of the memory cells of the flash ROM in a probe test process. Thereafter, the memory information written into the memory cell thereof is made unreprogrammable to thereby disable rewriting of the post-shipment memory information. Thus, the shortening of a TAT can be achieved as compared with a mask ROM built-in microcomputer, and management and fabrication costs can be reduced.
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