发明名称 Method for testing an integrated semiconductor memory, and integrated semiconductor memory
摘要 An integrated semiconductor memory that can be tested includes a control circuit and a memory cell having a selection transistor. In a normal operating mode, the integrated semiconductor memory can be controlled by applying control signals and can be switched from a normal operating mode to a test operating mode by the applying a signal combination of the control signals. In the test operating mode, the control circuit interprets a first of the control signals as a signal for turning off the selection transistor and a second of the control signals or a signal combination of the control signals as a signal for switching the selection transistor into the on state. The method enables the testing of different times between reading a data set into the memory cell and turning off the selection transistor.
申请公布号 US6963514(B2) 申请公布日期 2005.11.08
申请号 US20040017857 申请日期 2004.12.22
申请人 INFINEON TECHNOLOGIES AG 发明人 LINDSTEDT REIDAR;FUHRMANN DIRK
分类号 G11C7/00;G11C29/00;G11C29/34;(IPC1-7):G11C29/00 主分类号 G11C7/00
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