| 摘要 |
In a method of manufacturing a semiconductor film, nickel elements are first held as indicated by 103 on the surface of an amorphous silicon film 102 . Then a crystalline silicon film 104 is obtained by a heat treatment. At this time, the crystallization is remarkably improved by the action of the nickel elements. During this crystallization, nickel elements are diffused in a film. Then a thermal oxide film 105 is formed as a barrier film, and a silicon film 106 containing a high concentration of phosphorus is formed. By carrying out a heat treatment, the nickel elements in the crystalline silicon film 104 are transferred into the silicon film 106 . In this way, the concentration of nickel in the crystalline silicon film 104 is lowered.
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