发明名称 |
Circuit and technique for accurately sensing low voltage flash memory devices |
摘要 |
An exemplary sensing circuit for sensing the current drawn by a target memory cell comprises a first transistor connected across a first node and a second node, a load connected across the second node and a third node, and a voltage boosting circuit coupled to a supply voltage, wherein the voltage boosting circuit supplies a voltage at the third node which is greater than the supply voltage.
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申请公布号 |
US6963506(B1) |
申请公布日期 |
2005.11.08 |
申请号 |
US20030679179 |
申请日期 |
2003.10.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG ZHIGANG;YANG NIAN;HE YUE-SONG |
分类号 |
G11C16/06;G11C16/26;G11C16/30;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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