发明名称 |
Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking region |
摘要 |
Metal oxide semiconductor transistors and devices with such transistors and methods of fabricating such transistors and devices are provided. Such transistors may have a silicon well region having a first surface and having spaced apart source and drain regions therein. A gate insulator is provided on the first surface of the silicon well region and disposed between the source and drain regions and a gate electrode is provided on the gate insulator. A region of insulating material is disposed between a first surface of the drain region and the silicon well region. The region of insulating material extends toward but not to the source region. A source electrode is provided that contacts the source region. A drain electrode contacts the drain region and the region of insulating material.
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申请公布号 |
US6963094(B2) |
申请公布日期 |
2005.11.08 |
申请号 |
US20030394338 |
申请日期 |
2003.03.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE BYEONG-CHAN;CHOI SI-YOUNG;KIM CHUL-SUNG;YOO JONG-RYEOL;LEE DEOK-HYUNG |
分类号 |
H01L21/336;H01L21/8234;H01L21/8242;H01L27/108;H01L29/06;H01L29/08;H01L29/10;H01L29/417;(IPC1-7):H01L29/76;H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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