发明名称 Interfacial trap layer to improve carrier injection
摘要 In an embodiment of the invention, an electronic device includes an interfacial layer with traps. This interfacial layer is between an electrode and an organic layer, and if the electrode was adjacent to the organic layer, the energy barrier between these two layers is such that the current through the organic layer is limited by charge injection into this layer rather than the transport properties of the organic layer. The traps are used to accumulate charges of one charge type (e.g., either electrons or holes) within the interfacial layer. By accumulating charges, the bands of the interfacial layer are bent so that charges can tunnel from the electrode to the organic layer thus increasing the efficiency of the electronic device and allowing organic layers to be used within an electronic device that otherwise would be too inefficient for use in that device.
申请公布号 US6963081(B2) 申请公布日期 2005.11.08
申请号 US20030676969 申请日期 2003.09.30
申请人 OSRAM OTPO SEMICONDUCTORS GMBH 发明人 GUPTA RAHUL;PSCHENITZKA FLORIAN;CHOONG VI-EN;ALLEMAND PIERRE-MARC
分类号 H01L29/167;H01L29/207;H01L29/24;H01L31/062;H01L35/24;H01L51/00;H01L51/50;(IPC1-7):H01L35/24 主分类号 H01L29/167
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