METHOD OF MANUFACTURING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE, GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE OBTAINED BY THE METHOD, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN crystal and a GaN crystal substrate, by which the high quality GaN crystal and GaN crystal substrate can be manufactured under mild conditions of low pressure and low temperature.

SOLUTION: In the method of manufacturing the GaN crystal, comprising forming the GaN crystal by reacting gallium and nitrogen in a mixed melt of gallium and sodium under a gas atmosphere containing nitrogen, the reaction of the gallium and the nitrogen is performed under a pressurizing condition that exceeds atmospheric pressure, and the pressure P1 (atm (×1.013×105Pa)) of the pressurizing condition is set so as to satisfy the condition expressed by following conditional expression (I): P≤P1<(P+45) (I), wherein, P (atm (×1.013×105Pa)) denotes the minimum pressure required for generating the GaN crystal at a temperature T°C of the mixed melt.

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