| 发明名称 |
MFS FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR, FERROELECTRIC MEMORY, AND SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an MFS field-effect transistor, having a ferroelectric layer hardly causing holding loss due to leakage current or depolarization. <P>SOLUTION: The MFS type field effect transistor 100 includes a semiconductor layer 10, a PZT-based ferroelectric layer 15 formed on the semiconductor layer 10, a gate electrode 16 formed on the PZT-based ferroelectric layer 15, and impurity layers 14, which are formed on the semiconductor layer 10 and constitutes a source or drain. The PZT-based ferroelectric layer 15 has 2.5 to 40 mol% of Ti composition substituted to Nb. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
| 申请公布号 |
JP2005311194(A) |
申请公布日期 |
2005.11.04 |
| 申请号 |
JP20040128692 |
申请日期 |
2004.04.23 |
| 申请人 |
SEIKO EPSON CORP |
发明人 |
KIJIMA TAKESHI;HAMADA YASUAKI |
| 分类号 |
H01L41/09;H01L21/28;H01L21/316;H01L21/336;H01L21/8246;H01L21/8247;H01L27/105;H01L29/49;H01L29/51;H01L29/745;H01L29/76;H01L29/78;H01L29/788;H01L29/792;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L41/187;H01L41/318;H01L41/39;(IPC1-7):H01L21/824;H01L41/24 |
主分类号 |
H01L41/09 |
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