| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems of a performance improving technique in microfabrication of a semiconductor element with a high energy line, an X-ray, an electron beam or EUV light, and to provide a positive resist composition which simultaneously satisfies high sensitivity, high resolution, a good pattern shape and good line edge roughness. <P>SOLUTION: The positive resist composition contains a compound of a specific structure containing a group which produces an alkali-soluble group by the action of an acid in an amount of ≥50 mass% based on the solid content of the resist composition, and also contains a compound which generates an acid by the action of an actinic ray or a radiation. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
