| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that deterioration of efficiency is generated by temperature rise etc. in phosphor of a side which performs color transformation, and light volume is decreased further, when increase of light volume is attempted by enlargement of an LED chip and increase of drive electric power in the conventional semiconductor light emitting device of white luminescence. <P>SOLUTION: In a semiconductor light emitting device 1, a base 2 is installed wherein cavities which contain an LED chip 3 and a resin spacer are arranged. The resin spacer is constituted of a spacer of two layers which consists of a transparent resin spacer 4 and a wavelength transformation spacer 6 into which phosphor 6a is mixed, and which is formed to almost constant thickness. At the inside of the wavelength transformation spacer, a metal mesh 7 for heat dissipation which is partly connected to the base 2 or a wire 5 for heat dissipation is arranged. As a result, heat is reduced in the phosphor in the wavelength transformation spacer, and deterioration of emission efficiency is prevented, so that a semiconductor light emitting device can be provided with more high efficiency. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
