发明名称 VARIABLE CAPACITY CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a variable capacity circuit that uses a MOS switch for attaining the high breakdown voltage of a switch without using a high breakdown voltage process. <P>SOLUTION: Since this variable capacity unit circuit is provided with a p MOS switch control circuit 1 for controlling the gate of Q1 to be a VHH and the gate of Q2 to be a VDD or its neighborhood to thereby be able to be turned off so as to prevent high voltage from being applied to a MOSFET, the variable capacity unit circuit does not have to use a high breakdown voltage process so that its manufacturing cost can be reduced. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005311751(A) 申请公布日期 2005.11.04
申请号 JP20040126514 申请日期 2004.04.22
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 SHIBATA SHINTARO;MINOYA NAOSHI;SHINAGAWA MITSURU
分类号 H03K17/693;H03K17/695;H03K19/094 主分类号 H03K17/693
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