发明名称 |
VARIABLE CAPACITY CIRCUIT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a variable capacity circuit that uses a MOS switch for attaining the high breakdown voltage of a switch without using a high breakdown voltage process. <P>SOLUTION: Since this variable capacity unit circuit is provided with a p MOS switch control circuit 1 for controlling the gate of Q1 to be a VHH and the gate of Q2 to be a VDD or its neighborhood to thereby be able to be turned off so as to prevent high voltage from being applied to a MOSFET, the variable capacity unit circuit does not have to use a high breakdown voltage process so that its manufacturing cost can be reduced. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005311751(A) |
申请公布日期 |
2005.11.04 |
申请号 |
JP20040126514 |
申请日期 |
2004.04.22 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
SHIBATA SHINTARO;MINOYA NAOSHI;SHINAGAWA MITSURU |
分类号 |
H03K17/693;H03K17/695;H03K19/094 |
主分类号 |
H03K17/693 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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