| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device to reduce the time required for verifying DRC (design rule check) while improving reliability in a mask pattern data subjected to optical proximity correction, and to provide a semiconductor device. <P>SOLUTION: The method for producing a mask pattern for photolithography based on the design data for a semiconductor integrated circuit includes at least: a step (S1) of generating the data of a mask pattern, the step includes at least an original layer structured as the original pattern data hierarchy following the design data, a correction layer structured as a pattern data hierarchy for optical proximity correction, and a verification layer structured as a pattern data hierarchy exclusive for verification of the design rule; a design rule verification/data correction step (S2) to detect and debug a pattern against the design rule in accordance with predetermined conditions; and a step (S3) of imposing the data D1insp of an inspection pattern having a predetermined portion where the pattern of the verification layer can be superposed into the original layer to check the inspection pattern so as to evaluate the accuracy in the design rule verification/data correction step. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
