发明名称 TREATMENT METHOD FOR SUBSTRATE AND TREATMENT DEVICE FOR SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To form uniformly a resist pattern with a desired detailed size in a substrate side. <P>SOLUTION: A solvent feeder 33 is provided with a solvent vapor discharging nozzle 131 on a solvent feeder 33 capable of discharging solvent vapor which expands a resist pattern P, while being moved on the surface of a wafer W. Further, after the completion of a treatment procedure, the wafer W formed with the resist pattern P is carried into the solvent feeder 33. The solvent vapor discharging nozzle 131 is moved on the surface of the wafer W concerned, and the solvent vapor is supplied on the surface of the wafer W from the solvent vapor discharging nozzle 131. By this, a prescribed amount of the solvent vapor is uniformly supplied to the resist pattern P on the wafer surface. As a result, the resist pattern P expands uniformly by a predetermined size with the solvent vapor. The resist pattern P of a desired size is eventually formed uniformly in the wafer side. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005310953(A) 申请公布日期 2005.11.04
申请号 JP20040124193 申请日期 2004.04.20
申请人 TOKYO ELECTRON LTD 发明人 INATOMI YUICHIRO
分类号 G03F7/40;H01L21/00;H01L21/027;H01L21/304;(IPC1-7):H01L21/027 主分类号 G03F7/40
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