NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem that the deterioration of electrical characteristics of a nitride semiconductor device caused by the potential barrier formed by p-type dopant reduction derived from the re-growth interface, in the nitride semiconductor device having a re-growth process whereby a re-growth interface is composed of a p-type nitride semiconductor. SOLUTION: The vicinity of the interface of a first and a second nitride semiconductor layers is constituted such that it may possess p-type conductivity comprising the first p-type nitride semiconductor layer obtained with crystal growth on the substrate, and p-type nitride semiconductor layer 2 consisting of another crystal growth on the first nitride semiconductor layer. Owing to the structure, the potential barrier in the re-growth interface is reduced so as to improve the electrical characteristics of the nitride semiconductor device. COPYRIGHT: (C)2006,JPO&NCIPI