| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device using a resistance varying storage element capable of high speed operation. SOLUTION: In this device, a capacitive element is connected to a bit line through a switching element, and a current supply circuit supplying a current to the bit line so that the potential of the bit line is equalized to the potential of the capacitive element is connected between both ends of the switching elements, the prescribed electric charges are accumulated in the capacitive element in a state in which the switching element is cut off, after that, electric charges accumulated in the capacitive element is distributed to capacitance of this capacitive element and capacitance of the bit line by making the switching element a connection state, the potential of the capacitive element is set to a bias potential and the potential of the bit line is preliminarily raised to the prescribed potential. After that, the switching element is made a cut-off state, the potential of the bit line is raised to a bias potential using the current supply circuit, and stored data is read from the resistance varying storage element. COPYRIGHT: (C)2006,JPO&NCIPI
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